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Freescale Semiconductor, Inc.
Technical Data
MBC13900/D Rev. 0, 06/2002 NPN Silicon Low Noise Transistor
MBC13900
(Scale 2:1)
Package Information Plastic Package Case 318M (SOT-343)
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Ordering Information
Device MBC13900T1 Marking 900 Package SOT-343
The MBC13900 is a high performance transistor fabricated using Motorola's 15 GHz f bipolar IC process. It is housed in the 4-lead SC-70 (SOT-343) surface mount plastic package resulting in a parasitic effect reduction and RF performance enhancements. The high performance at low power makes the MBC13900 suitable for front-end applications in portable wireless systems such as pagers, cellular and cordless phones. * * * * * Low Noise Figure, NFmin = 0.8 dB (Typ) @ 0.9 GHz, 2.0 V and 5.0 mA Maximum Stable Gain, 22 dB @ 0.9 GHz, 2.0 V and 5.0 mA Output Third Order Intercept, OIP3 = 18 dBm (Typ) @ 2.0 V and 5.0 mA Ultra small SOT-343 Surface Mount Package Available Only in Tape and Reel Packaging
Base 2
3 Emitter
Emitter 1
4 Collector
Figure 1. Pin Connections
Definitive Data: Motorola reserves the right to change the Production detail specifications as may be required to permit improvements in the design of its product. (c) Motorola, Inc., 2002. All rights reserved.
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Electrical Specifications
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1 Electrical Specifications
Table 1. Maximum Ratings
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Power Dissipation @ TC = 75 C Derate Linearity above TC = 75 C at Collector Current-Continuous Symbol VCEO VCBO VEBO PD(max) IC TJ(max) Tstg Value 6.5 8.0 3.0 0.188 2.5 20 150 -55 to 150 Unit Vdc Vdc Vdc W mW/ C mA C C
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Maximum Junction Temperature Storage Temperature
NOTES: 1. Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the limits in the Electrical Characteristics or Recommended Operating Conditions tables. 2. ESD (electrostatic discharge) immunity meets Human Body Model (HBM) 400 V and Machine Model (MM) 50 V. Additional ESD data available upon request.
Table 2. Thermal Characteristic
Characteristic Thermal Resistance, Junction-to-Case Symbol RJC Max 400 Unit C/W
NOTES: To calculate the junction termpature use TJ = (PD x RJC) + TC. The case temperature measured on collector lead adjacent to the package body.
Table 3. Electrical Characteristics
Characteristic OFF Characteristic [Note 1] Collector-Emitter Breakdown Voltage (IC = 0.1 mA, IB = 0) Collector-Base Breakdown Voltage (IC = 0.1 mA, IE = 0) Emitter-Base Breakdown Voltage (IE = 0.1 mA, IC = 0) Collector Cutoff Current (VCB = 7.0 V, IE = 0) Emitter Cutoff Current (VEB = 2.0 V, IC = 0) Base Cutoff Current (VCE = 5.0 V, IB = 0) ON Characteristic [Note 1] DC Current Gain (VCE = 2.0 V, IC = 5.0 mA) hFE 100 200 V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO ICEO 6.5 8.0 3.0 7.5 12 4.0 0.1 0.1 0.1 Vdc Vdc Vdc A A A Symbol Min Typ Max Unit
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Table 3. Electrical Characteristics (Continued)
Characteristic Dynamic Characteristics Current Gain Bandwidth Product (VCE = 2.0 V, IC = 15 mA, f = 0.9 GHz) Performance Characteristic Insertion Gain VCE = 2.0 V, IC = 5.0 mA, f = 0.9 GHz VCE = 2.0 V, IC = 5.0 mA, f = 1.9 GHz VCE = 3.0 V, IC = 3.0 mA, f = 0.9 GHz VCE = 3.0 V, IC = 3.0 mA, f = 1.9 GHz |S21|2 18.5 13.5 16.5 12.5 MSG, MAG 22 18 21 17.5 NFmin GNF OIP3 18 21 13.5 19 22 16 21 15 dBm 0.8 0.9 0.8 0.9 0.9 1.1 0.9 1.1 dB 23 19 22 18.5 dB 19.5 14.5 17.5 13.5 dB dB f 15 GHz Symbol Min Typ Max Unit
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Maximum Stable Gain and/or Maximum Available Gain [Note 2] VCE = 2.0 V, IC = 5.0 mA, f = 0.9 GHz VCE = 2.0 V, IC = 5.0 mA, f = 1.9 GHz VCE = 3.0 V, IC = 3.0 mA, f = 0.9 GHz VCE = 3.0 V, IC = 3.0 mA, f = 1.9 GHz Minimum Noise Figure VCE = 2.0 V, IC = 5.0 mA, f = 0.9 GHz VCE = 2.0 V, IC = 5.0 mA, f = 1.9 GHz VCE = 3.0 V, IC = 3.0 mA, f = 0.9 GHz VCE = 3.0 V, IC = 3.0 mA, f = 1.9 GHz Associated Gain at Minimum Noise Figure VCE = 2.0 V, IC = 5.0 mA, f = 0.9 GHz VCE = 2.0 V, IC = 5.0 mA, f = 1.9 GHz VCE = 3.0 V, IC = 3.0 mA, f = 0.9 GHz VCE = 3.0 V, IC = 3.0 mA, f = 1.9 GHz Output Third Order Intercept [Note 3] (VCE = 2.0 V, IC = 5.0 mA, f = 0.9 GHz) (VCE = 2.0 V, IC = 5.0 mA, f = 1.9 GHz) (VCE = 3.0 V, IC = 3.0 mA, f = 0.9 GHz) (VCE = 3.0 V, IC = 3.0 mA, f = 1.9 GHz)
NOTES: 1. Pulse width 300 s, duty cycle 2% pulsed. 2. Maximum Available Gain and Maximum Stable Gain are defined by the K factor as follows: S 21 S 21 2 MAG = ---------- K K - 1 , if K > 1, MSG = ---------- , if K < 1 S S 12 12 3. Zin and Zout matched for optimum IP3.
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Typical Performance Characteristics
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2 Typical Performance Characteristics
0.35 0.3 C, CAPACITANCE (pF) 0.25 0.2 0.15 0.1 0.05 0 0 0.5 1.0 Ccb f = 1.0 MHz 1.5 2.5 2.0 3.0 VCB, REVERSE VOLTAGE (V) 3.5 4.0 Cob
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Figure 2. Capacitance versus Voltage
162 160 hFE, DC CURRENT GAIN 158 156 154 152 150 148 0 2.0 4.0 6.0 8.0 10 12 14 IC, COLLECTOR CURRENT (mA) 16 18 20 2.0 V 3.0 V
Figure 3. hFE, DC Current Gain versus Collector Current
16 f, GAIN BANDWIDTH PRODUCT (GHz) 14 12 10 8.0 6.0 4.0 2.0 0 2.0 4.0 6.0 8.0 10 12 14 16 18 20 f = 900 MHz 3.0 V 2.0 V
IC, COLLECTOR CURRENT (mA)
Figure 4. Gain-Bandwidth Product versus Collector Current
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16 f, GAIN BANDWIDTH PRODUCT (GHz) 14 12 10 8.0 6.0 4.0 2.0 0 2.0 4.0 6.0 8.0 10 12 14 16 18 20 f = 1.9 GHz 3.0 V 2.0 V
IC, COLLECTOR CURRENT (mA)
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Figure 5. Gain-Bandwidth Product versus Collector Current
MSG, MAXIMUM STABLE GAIN; MAG, MAXIMUM AVAILABLE GAIN; |S21|2, FORWARD INSERTION GAIN (dB)
35 30 25 20 15 10 5.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 |S21|2 MAG MSG VCE = 2.0 V IC = 5.0 mA
5.0
5.5
f, FREQUENCY (GHz)
Figure 6. Maximum Stable/Available gain and Forward Insertion Gain versus Frequency
MSG, MAXIMUM STABLE GAIN; MAG, MAXIMUM AVAILABLE GAIN; |S21|2, FORWARD INSERTION GAIN (dB)
35 30 25 20 15 10 5.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 |S21|2 MSG VCE = 3.0 V IC = 3.0 mA
MAG
f, FREQUENCY (GHz)
Figure 7. Maximum Stable/Available gain and Forward Insertion Gain versus Frequency
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Typical Performance Characteristics
MSG, MAXIMUM STABLE GAIN; MAG, MAXIMUM AVAILABLE GAIN; |S21|2, FORWARD INSERTION GAIN (dB)
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26 24 22 20 18 16 14 12 10 8.0 6.0 0 2.0 4.0
MSG/MAG 900 MHz |S21|2 900 MHz MSG/MAG 1.9 GHz |S21|2 1.9 GHz
VCE = 2.0 V 6.0 8.0 10 12 14 IC, COLLECTOR CURRENT (mA) 16 18 20
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Figure 8. Maximum Stable/Available gain and Forward Insertion Gain versus Collector Current
MSG, MAXIMUM STABLE GAIN; MAG, MAXIMUM AVAILABLE GAIN; |S21|2, FORWARD INSERTION GAIN (dB)
27 25 23 21 19 17 15 13 11 9.0 7.0 VCE = 3.0 V 0 2.0 4.0 6.0 8.0 10 12 14 IC, COLLECTOR CURRENT (mA) 16 18 20 |S21|2 900 MHz MSG/MAG 1.9 GHz |S21|2 1.9 GHz MSG/MAG 900 MHz
Figure 9. Maximum Stable/Available gain and Forward Insertion Gain versus Collector Current
26 1.8 1.6 GNF NFmin 1.4 1.2 1.0 VCE = 2.0 VIC = 5.0 mA 1.0 1.5 2.0 2.5 3.0 f, FREQUENCY (GHz) 3.5 0.8 0.6 4.0
GNF, ASSOCIATED GAIN (dB)
22 18 14 10 6.0 2.0 0.5
Figure 10. Minimum Noise Figure and Associated Gain versus Frequency
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NFmin, MINIMUM NOISE FIGURE (dB)
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28 26 24 22 20 18 16 14 12 10 8.0 6.0 4.0 2.0 0.5 1.8 NFmin 1.6 1.4 1.2 1.0 VCE = 3.0 VIC = 3.0 mA 1.0 1.5 2.0 2.5 f, FREQUENCY (GHz) 3.0 3.5 0.8 0.6 4.0
GNF
Figure 11. Minimum Noise Figure and Associated Gain versus Frequency
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GNF, ASSOCIATED GAIN (dB)
1.8 1.6 1.4 1.2 NFmin 1.9 GHz 1.0 0.8 VCE = 2.0 V 16 18 0.6 20
NFmin, MINIMUM NOISE FIGURE (dB) NFmin, MINIMUM NOISE FIGURE (dB)
20 16 12 8.0 4.0 0
GNF 900 MHz
GNF 1.9 GHz
NFmin 900 MHz 0 2.0 4.0 6.0 8.0 10 12 14 IC, COLLECTOR CURRENT (mA)
Figure 12. Minimum Noise Figure and Associated Gain versus Collector Current
26
GNF, ASSOCIATED GAIN (dB)
1.8 GNF 900 MHz 1.6 1.4 GNF 1.9 GHz NFmin 1.9 GHz 1.2 1.0 0.8 NFmin 900 MHz VCE = 3.0 V 16 18 20 0 2.0 4.0 6.0 8.0 10 12 14 IC, COLLECTOR CURRENT (mA) 0.6
22 18 14 10 6.0 2.0
Figure 13. Minimum Noise Figure and Associated Gain versus Collector Current
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NFmin, MINIMUM NOISE FIGURE (dB)
GNF, ASSOCIATED GAIN (dB)
7
Typical Performance Characteristics
26 24 22 20 18 16 14 12 10 8.0 6.0 4.0 2.0 0
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OIP3, OUTPUT INTERCEPT POINT (dBm)
3.0 V 2.0 V
f = 900 MHz
0
2.0
4.0
6.0 8.0 10 12 14 IC, COLLECTOR CURRENT (mA)
16
18
20
Figure 14. Output Third Order Intercept versus Collector Current
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OIP3, OUTPUT INTERCEPT POINT (dBm)
26 24 22 20 18 16 14 12 10 8.0 6.0 4.0
3.0 V 2.0 V
f = 1.9 GHz
0
2.0
4.0
6.0 8.0 10 12 14 IC, COLLECTOR CURRENT (mA)
16
18
20
Figure 15. Output Third Order Intercept versus Collector Current
14
P1dB, 1dB COMPRESSION POINT (dBm)
10 6.0 2.0 -2.0 -6.0 -10 -14 0 2.0 4.0 6.0 8.0 10 12 14 IC, COLLECTOR CURRENT (mA)
3.0 V 2.0 V
f = 900 MHz
16
18
20
Figure 16. One dB Compression Point versus Collector Current
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P1dB, 1dB COMPRESSION POINT (dBm)
10 6.0 2.0 -2.0 -6.0 -10 -14 0 2.0 4.0 6.0 8.0 10 12 14 IC, COLLECTOR CURRENT (mA)
3.0 V 2.0 V
f = 1.9 GHz
16
18
20
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Figure 17. One dB Compression Point versus Collector Current
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Applications Information
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3 Applications Information
A flexible applications board topology has been developed to demonstrate the performance of the MBC13900 at 900 and 1900 MHz. The designs are a compromise of the competing performance requirements of gain, noise figure, input third-order intercept point (IIP3) and return losses. PCB, samples and assembly information are available from Motorola under part number KITMBC13900/D.
3.1 900 MHz LNA
Figure 18 shows the schematic and Figure 19 shows the component placement for a 900 MHz LNA. The design goals for the circuit are: NF < 1.2 dB Gain > 19 dB Return Loss > 10 dB, input and output Unconditional stability from 100 MHz to 6 GHz. Typical performance that can be expected from this circuit at 3.0 and 3.5 V VCC is listed in Table 4. The component values can be changed to enhance the performance of a particular parameter but usually at the expense of another. Gain can be improved by sacrificing stability (R3 and R5). Input return loss can be sacrificed to improve noise figure. IIP3 can be improved by increasing emitter degeneration (L3) and bias current (R2). Unused traces are available on the PCB to add emitter degeneration at leads 1 and 3 of the device.
VCC C1 R1 R2 C4 R4 R5
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L1 C3 RF In C 7 L4 R3
L2 C2 RF Out
Figure 18. 900 MHz LNA Schematic
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Component C1 C2 C3 C4 C5 C6 L1 L2 L3 R1 R2 R3 R4 R5 R6 Vias PCB Value 1.0 F 3.3 pF 12 pF 0.01 F 1.0 F 0.3 pF 6.8 nH 5.6 nH <0.5 nH 133 49.9 k 16.5 0 3.9 0 FR4 Comments Optional Bypassing DC Block and S22 DC Block and S11 Broadband bypass Broadband bypass IIP3 improvement Toko LL1608-FS, match, bias Toko LL1608-FH, match, bias Emitter L on board (distance to GND vias) Bias Bias Stability, S22 Jumper Stability, S22 Jumper D = 15 mil r=4.5, h=25 mil, t=1.75 mil
VCC C5
Gnd
C1
R2
R4
R1
C4
R5
L1
C6
R6
C3
L2
R3
C2
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Figure 19. 900 MHz LNA Board Layout Table 4. Typical 900 MHz LNA Performance
IC (mA) 5.0 6.1 NF (dB) 1.2 1.21 50 Insertion Gain (dB) 19.7 20.2 Output IP3 (dBm) 15 17.6 Input Return Loss (dB) 10.1 10.8 Output Return Loss (dB) 10.2 10.8
VCC
3.0 3.5
3.2 1900 MHz LNA
Figure Figure 20 shows the schematic and Figure 21 shows the component placement for a 1900 MHz LNA. The design goals for the circuit are: NF < 1.35 dB Gain > 14 dB Return Loss > 10 dB, input and output Unconditional stability from 100 MHz to 6 GHz. Typical performance that can be expected from this circuit at 3.0 V VCC and 5.0 mA is listed in Table 5. The component values can be changed to enhance the performance of a particular parameter but usually at the expense of another. Gain can be improved by sacrificing stability (R3 and R5). Input return loss can be sacrificed to improve noise figure. Input return loss can be improved at the expense of noise figure (C3, C7, L4). IIP3 can be improved by increasing emitter degeneration (L3) and bias current (R2). Unused traces are available on the PCB to add emitter degeneration at leads 1 and 3 of the device.
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Applications Information
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VCC C1 R1 R2 C4 R4 R5
L1 C3 C7 L4 R3
L2 C2 RF Out
RF In
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Figure 20. 1900 MHz LNA Schematic
Component C1 C2 C3 C4 C5 C7 L1 L2 L3 L4 R1 R2 R3 R4 R5 Vias PCB Value 1.0 F 22 pF 22 pF 0.01 F 1.0 F 0.6 pF 8.2 nH 3.3 nH <0.5 nH 1.2 nH 133 49.9 k 8.2 0 4.7 FR4 Comments Optional Bypassing DC Block and output match DC Block and input match RF and IM subharmonic short to ground RF and IM subharmonic short to ground Input match, RF / S11 compromise Bias decoupling, input match Output match, bias decoupling Emitter L on board (distance to GND vias) S11 Bias Bias Stability and S22 improvement Jumper Stability, Gain, S22 D = 15 mil r=4.5, h=25 mil, t=1.75 mil
VCC C5
Gnd
C1
R4
R2
R1
C4
L1
C6
R6
C3
L2
R5
R3
C2
Figure 21. 1900 MHz LNA Board Layout Table 5. Typical 1900 MHz LNA Performance
IC (mA) 5.0 6.1 NF (dB) 1.28 1.29 50 Insertion Gain (dB) 14 14.4 Output IP3 (dBm) 19 20.2 Input Return Loss (dB) 10.4 10.8 Output Return Loss (dB) 10.7 11
VCC
3.0 3.5
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Table 6. Common Emitter S-Parameters
VCE (Vdc) IC (mA) f (MHz) S11 |S11| 0.973 0.961 0.895 0.868 0.766 0.721 0.706 0.649 0.628 0.606 0.606 0.611 0.610 0.948 0.907 0.796 0.763 0.638 0.585 0.571 0.532 0.520 0.511 0.518 0.529 0.536 0.926 0.853 -6 -33 -57 -63 -91 -114 -119 -140 -166 173 155 138 122 -8 -41 -70 -77 -107 -131 -136 -156 179 159 143 128 114 -10 -48 |S21| 3.754 3.366 3.341 3.256 2.688 2.610 2.501 2.280 1.984 1.717 1.478 1.421 1.309 7.181 6.508 5.770 5.533 4.304 3.904 3.716 3.272 2.745 2.360 2.046 1.907 1.747 10.121 8.944 S21 175 153 135 131 111 94 91 77 58 45 33 21 9 173 146 126 121 101 86 83 70 53 41 30 19 8 172 141 |S12| 0.008 0.038 0.065 0.070 0.091 0.100 0.102 0.104 0.105 0.099 0.094 0.089 0.085 0.008 0.037 0.059 0.062 0.076 0.082 0.083 0.085 0.087 0.088 0.088 0.091 0.096 0.008 0.035 S12 86 71 56 53 38 26 23 15 2 -3 -10 -12 -11 86 67 52 49 36 27 25 20 13 10 7 5 5 84 65 |S22| 0.997 0.968 0.910 0.915 0.851 0.788 0.780 0.731 0.667 0.650 0.640 0.604 0.581 0.993 0.937 0.843 0.842 0.753 0.675 0.667 0.616 0.554 0.542 0.530 0.500 0.474 0.990 0.906 S22 -3 -12 -22 -24 -33 -39 -41 -47 -56 -62 -68 -74 -81 -4 -15 -27 -29 -37 -42 -44 -48 -57 -62 -67 -72 -78 -4 -18
2.0
1.0
0.1 0.5 0.9 1.0 1.5
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1.9 2.0 2.4 3.0 3.5 4.0 4.5 5.0 2.0 0.1 0.5 0.9 1.0 1.5 1.9 2.0 2.4 3.0 3.5 4.0 4.5 5.0 3.0 0.1 0.5
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Applications Information
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Table 6. Common Emitter S-Parameters (Continued)
VCE (Vdc) IC (mA) f (MHz) S11 |S11| 0.716 0.680 0.556 0.507 0.497 0.472 0.468 0.466 0.476 0.491 0.503 0.884 0.753 0.595 0.561 0.457 0.421 0.416 0.408 0.418 0.424 0.437 0.454 0.471 0.785 0.575 0.438 0.421 -80 -87 -118 -141 -147 -166 170 152 137 123 109 -13 -59 -94 -102 -134 -156 -161 -178 160 143 129 116 104 -19 -79 -118 -126 |S21| 7.393 7.000 5.248 4.579 4.359 3.778 3.120 2.680 2.333 2.148 1.963 15.377 12.586 9.434 8.786 6.309 5.291 5.033 4.295 3.505 3.012 2.633 2.394 2.181 25.691 17.485 11.534 10.545 S21 120 115 95 81 78 66 51 39 28 18 8 170 134 111 106 88 75 72 62 48 37 27 17 7 165 122 99 95 |S12| 0.053 0.056 0.068 0.073 0.074 0.077 0.082 0.086 0.091 0.096 0.104 0.007 0.032 0.046 0.048 0.058 0.064 0.065 0.072 0.080 0.088 0.095 0.104 0.114 0.007 0.027 0.037 0.038 S12 49 47 36 31 29 25 21 18 15 12 11 83 61 49 47 39 36 36 34 30 26 23 19 15 78 59 51 51 |S22| 0.786 0.780 0.685 0.609 0.601 0.554 0.495 0.485 0.476 0.447 0.423 0.982 0.846 0.699 0.689 0.596 0.531 0.525 0.485 0.435 0.426 0.415 0.393 0.368 0.961 0.750 0.595 0.567 S22 -30 -31 -38 -43 -44 -48 -56 -61 -66 -70 -75 -6 -22 -33 -34 -39 -42 -43 -47 -54 -58 -63 -67 -72 -8 -28 -35 -35
0.9 1.0 1.5 1.9 2.0
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2.4 3.0 3.5 4.0 4.5 5.0 5.0 0.1 0.5 0.9 1.0 1.5 1.9 2.0 2.4 3.0 3.5 4.0 4.5 5.0 10 0.1 0.5 0.9 1.0
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Table 6. Common Emitter S-Parameters (Continued)
VCE (Vdc) IC (mA) f (MHz) S11 |S11| 0.366 0.356 0.354 0.362 0.392 0.399 0.414 0.434 0.453 0.708 0.480 0.381 0.371 0.344 0.345 0.345 0.358 0.392 0.403 0.418 0.438 0.460 0.639 0.430 0.365 0.360 0.350 0.357 -156 -176 -180 166 148 134 120 109 98 -25 -94 -133 -141 -169 174 170 157 142 129 116 106 95 -31 -107 -146 -153 -178 167 |S21| 7.311 5.901 5.625 4.737 3.842 3.307 2.907 2.613 2.374 32.559 19.200 11.991 10.889 7.466 5.959 5.683 4.765 3.852 3.324 2.924 2.618 2.375 37.220 19.608 11.885 10.741 7.337 5.815 S21 80 69 67 57 45 35 25 16 6 161 115 94 90 76 66 64 55 43 33 24 14 5 158 110 91 87 73 64 |S12| 0.050 0.058 0.060 0.069 0.082 0.092 0.103 0.113 0.124 0.007 0.024 0.033 0.035 0.047 0.056 0.059 0.069 0.084 0.095 0.105 0.117 0.128 0.007 0.022 0.032 0.034 0.047 0.056 S12 48 46 46 44 38 34 29 25 18 83 58 54 54 53 51 50 47 42 37 31 26 20 75 58 58 58 55 54 |S22| 0.500 0.454 0.449 0.417 0.372 0.357 0.345 0.328 0.307 0.938 0.679 0.538 0.515 0.460 0.424 0.420 0.392 0.349 0.336 0.323 0.307 0.288 0.919 0.629 0.504 0.483 0.438 0.408 S22 -38 -39 -40 -43 -49 -54 -59 -65 -69 -10 -29 -34 -33 -36 -37 -38 -41 -47 -52 -57 -63 -67 -12 -30 -32 -32 -34 -35
1.5 1.9 2.0 2.4 3.0
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3.5 4.0 4.5 5.0 15 0.1 0.5 0.9 1.0 1.5 1.9 2.0 2.4 3.0 3.5 4.0 4.5 5.0 20 0.1 0.5 0.9 1.0 1.5 1.9
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Applications Information
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Table 6. Common Emitter S-Parameters (Continued)
VCE (Vdc) IC (mA) f (MHz) S11 |S11| 0.357 0.371 0.408 0.419 0.435 0.453 0.475 0.970 0.949 0.892 0.878 0.778 0.730 0.714 0.652 0.634 0.604 0.599 0.604 0.602 0.951 0.913 0.807 0.774 0.647 0.591 0.576 0.531 164 152 138 126 113 104 94 -7 -31 -55 -61 -89 -111 -116 -137 -164 175 157 140 124 -8 -39 -67 -74 -104 -127 -132 -152 |S21| 5.555 4.641 3.746 3.239 2.849 2.545 2.306 3.745 3.341 3.339 3.275 2.724 2.648 2.543 2.326 2.040 1.765 1.521 1.466 1.348 6.981 6.335 5.710 5.488 4.306 3.935 3.750 3.316 S21 62 53 42 32 23 13 4 175 154 136 132 112 96 93 80 61 48 35 23 12 173 147 128 123 103 87 85 72 |S12| 0.060 0.069 0.084 0.096 0.109 0.119 0.131 0.007 0.034 0.059 0.065 0.084 0.093 0.095 0.098 0.098 0.093 0.091 0.084 0.080 0.007 0.033 0.054 0.057 0.071 0.077 0.077 0.080 S12 52 49 44 39 32 27 20 86 73 59 54 39 28 26 17 5 -1 -8 -10 -9 88 69 54 51 37 28 26 22 |S22| 0.403 0.378 0.338 0.323 0.312 0.295 0.276 0.999 0.989 0.939 0.919 0.869 0.808 0.801 0.755 0.689 0.670 0.660 0.626 0.606 0.992 0.944 0.859 0.860 0.777 0.704 0.697 0.647 S22 -36 -39 -45 -51 -56 -61 -66 -3 -12 -21 -23 -31 -37 -39 -44 -53 -60 -66 -73 -79 -3 -14 -25 -27 -35 -40 -42 -47
2.0 2.4 3.0 3.5 4.0
Freescale Semiconductor, Inc...
4.5 5.0 3.0 1.0 0.1 0.5 0.9 1.0 1.5 1.9 2.0 2.4 3.0 3.5 4.0 4.5 5.0 2.0 0.1 0.5 0.9 1.0 1.5 1.9 2.0 2.4
16
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Table 6. Common Emitter S-Parameters (Continued)
VCE (Vdc) IC (mA) f (MHz) S11 |S11| 0.516 0.505 0.508 0.521 0.526 0.928 0.859 0.725 0.687 0.559 0.505 0.493 0.462 0.458 0.452 0.460 0.476 0.486 0.884 0.756 0.598 0.570 0.458 0.415 0.408 0.395 0.407 0.407 -178 162 146 130 115 -9 -46 -77 -84 -115 -138 -143 -162 173 154 139 125 110 -12 -55 -90 -98 -129 -152 -157 -174 163 146 |S21| 2.790 2.402 2.078 1.943 1.782 10.077 8.948 7.487 7.105 5.356 4.701 4.473 3.886 3.218 2.763 2.403 2.216 2.025 15.441 12.831 9.722 9.076 6.576 5.514 5.251 4.489 3.680 3.158 S21 55 43 32 21 10 172 142 121 116 97 82 79 68 52 41 30 20 10 170 135 112 107 89 76 74 63 49 39 |S12| 0.082 0.081 0.083 0.084 0.089 0.007 0.032 0.049 0.052 0.063 0.067 0.068 0.072 0.077 0.082 0.085 0.090 0.098 0.007 0.029 0.042 0.045 0.054 0.060 0.061 0.067 0.076 0.083 S12 14 12 8 7 7 84 66 51 50 38 31 31 27 22 20 17 14 13 82 64 50 48 42 38 37 35 31 28 |S22| 0.584 0.574 0.563 0.535 0.511 0.991 0.917 0.806 0.803 0.711 0.638 0.631 0.585 0.529 0.518 0.509 0.483 0.460 0.985 0.882 0.743 0.711 0.629 0.564 0.557 0.517 0.464 0.450 S22 -55 -60 -65 -70 -76 -4 -17 -28 -30 -37 -41 -42 -47 -54 -59 -64 -69 -74 -5 -22 -31 -32 -38 -40 -41 -45 -51 -56
3.0 3.5 4.0 4.5 5.0
Freescale Semiconductor, Inc...
3.0
0.1 0.5 0.9 1.0 1.5 1.9 2.0 2.4 3.0 3.5 4.0 4.5 5.0
5.0
0.1 0.5 0.9 1.0 1.5 1.9 2.0 2.4 3.0 3.5
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Applications Information
Freescale Semiconductor, Inc.
Table 6. Common Emitter S-Parameters (Continued)
VCE (Vdc) IC (mA) f (MHz) S11 |S11| 0.417 0.434 0.450 0.795 0.587 0.438 0.417 0.351 0.334 0.332 0.336 0.363 0.371 0.385 0.405 0.425 0.723 0.487 0.373 0.355 0.317 0.312 0.315 0.327 0.354 0.371 0.383 0.400 131 118 105 -18 -74 -112 -119 -150 -171 -175 169 151 136 122 110 99 -22 -88 -127 -134 -164 177 173 159 142 128 116 105 |S21| 2.768 2.517 2.294 25.574 17.871 11.957 10.950 7.620 6.171 5.878 4.960 4.029 3.465 3.048 2.743 2.493 32.706 19.861 12.612 11.492 7.867 6.309 6.004 5.044 4.069 3.507 3.073 2.757 S21 29 19 9 165 123 101 97 81 70 68 59 46 36 27 17 8 163 116 96 92 77 67 65 56 44 35 25 16 |S12| 0.090 0.098 0.108 0.007 0.025 0.034 0.036 0.047 0.054 0.056 0.065 0.076 0.087 0.097 0.107 0.117 0.006 0.021 0.031 0.033 0.044 0.053 0.055 0.064 0.078 0.089 0.099 0.109 S12 25 21 17 79 60 54 52 50 47 47 45 40 36 31 26 20 79 60 55 55 53 52 51 48 43 38 33 27 |S22| 0.438 0.419 0.398 0.970 0.780 0.631 0.602 0.536 0.490 0.485 0.454 0.408 0.393 0.383 0.368 0.348 0.949 0.695 0.556 0.555 0.494 0.460 0.454 0.429 0.390 0.384 0.376 0.361 S22 -61 -67 -72 -7 -26 -33 -33 -37 -38 -39 -42 -48 -53 -58 -63 -68 -9 -26 -32 -32 -34 -37 -37 -41 -47 -52 -57 -61
4.0 4.5 5.0 10 0.1 0.5
Freescale Semiconductor, Inc...
0.9 1.0 1.5 1.9 2.0 2.4 3.0 3.5 4.0 4.5 5.0 15 0.1 0.5 0.9 1.0 1.5 1.9 2.0 2.4 3.0 3.5 4.0 4.5
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Table 6. Common Emitter S-Parameters (Continued)
VCE (Vdc) IC (mA) f (MHz) S11 |S11| 0.427 0.660 0.430 0.343 0.335 0.313 0.317 0.318 0.332 0.365 0.379 0.393 0.411 0.434 95 -27 -98 -137 -144 -172 171 168 155 140 127 115 105 94 |S21| 2.500 37.408 20.678 12.691 11.493 7.854 6.249 5.963 4.996 4.042 3.486 3.068 2.747 2.492 S21 7 160 112 93 89 75 66 64 55 43 34 25 16 6 |S12| 0.120 0.006 0.021 0.030 0.032 0.044 0.052 0.055 0.065 0.080 0.090 0.102 0.112 0.123 S12 21 79 60 59 59 57 55 54 51 45 40 34 29 23 |S22| 0.341 0.933 0.672 0.548 0.526 0.479 0.450 0.446 0.421 0.381 0.366 0.356 0.342 0.324 S22 -65 -10 -27 -31 -31 -33 -34 -35 -38 -44 -50 -55 -61 -66
5.0 20 0.1 0.5 0.9 1.0
Freescale Semiconductor, Inc...
1.5 1.9 2.0 2.4 3.0 3.5 4.0 4.5 5.0
MOTOROLA
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Applications Information
Freescale Semiconductor, Inc.
Table 7. Common Emitter Noise Parameters
VCE (V) 2.0
IC (mA) 5.0
freq (Ghz) 0.5 0.7 0.9 1.0 1.5 1.9
NFmin (dB) 0.76 0.76 0.77 0.77 0.82 0.90 0.92 1.03 1.24 1.47 1.74 0.76 0.76 0.76 0.77 0.82 0.91 0.94 1.06 1.32 1.59 1.92
Gamma Opt Mag 0.26 0.25 0.24 0.24 0.23 0.22 0.22 0.22 0.23 0.25 0.27 0.38 0.37 0.37 0.36 0.35 0.34 0.34 0.33 0.31 0.30 0.29 Ang 3 14 25 31 60 85 91 116 155 -172 137 8 17 26 31 56 77 83 105 141 173 -153
Rn 9.0 8.5 8.5 8.0 7.0 6.5 6.5 5.5 5.0 5.0 6.5 12.0 11.5 11.0 11.0 9.5 8.5 8.0 6.5 5.0 4.5 6.5
rn 0.18 0.17 0.17 0.16 0.14 0.13 0.13 0.11 0.10 0.10 0.13 0.24 0.23 0.22 0.22 0.19 0.17 0.16 0.13 0.10 0.09 0.13
GNF (dB) 25.27 23.60 22.03 21.29 17.94 15.73 15.24 13.54 11.75 10.96 10.81 24.32 22.70 21.19 20.47 17.24 15.10 14.63 12.98 11.27 10.52 10.39
K
0.29 0.37 0.48 0.51 0.74 0.90 0.93 1.03 1.17 1.23 1.29 0.22 0.28 0.36 0.38 0.59 0.76 0.79 0.94 1.12 1.24 1.34
Freescale Semiconductor, Inc...
2.0 2.4 3.0 3.5 4.0 3.0 3.0 0.5 0.7 0.9 1.0 1.5 1.9 2.0 2.4 3.0 3.5 4.0
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Table 8. SPICE Parameters (MBC13900 Die Parameters)
Name IS BF NF VAF IKF ISE NE Value 2.77E-16 181.6 1.012 40.66 0.237 3.79E-14 2.00 4.547 1.00 2.722 9.98E-04 3.78E-15 2.00 9.055 Name IRB RBM RE RC XTB EG XTI CJE VJE MJE CJC VJC MJC XCJC Value 0.006 0.047 4.431 5.845 0.6 1.195 0.8 4.52E-13 1.95 0.58 1.56E-13 0.424 0.232 0.187 Name TF XTF VTF ITF PTF TR FC Value 6.34E-12 3.051 1.336 0.202 0 1.02E-09 0.95
Freescale Semiconductor, Inc...
BR NR VAR IKR ISC NC RB
0.6 nH B 140 fF
0.5 nH
7.0 fF C B E
0.5 nH 0.25 nH 0.1 nH
0.6 nH 140 fF
C
E
Figure 22. Simplified Package Model
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Applications Information
Freescale Semiconductor, Inc.
j1.0
j0.5
j2.0
OUT PUT
j0.2
UT INP
VCE = 2.0 V IC = 5.0 mA NF Opt = 0.77 dB
---Potentially Unstable NF Opt (dB) 0.77 O
0.24 25.2
f (GHz)
23 dB 22 21 1.0 dB 20 1.5 2.0 3.0
Rn 8.5
K 0.48
0.9
- j0.2
Freescale Semiconductor, Inc...
- j0.5 - j1.0 0.2 0.5 1.0
4.0
- j2.0
2.0
Figure 23. Constant Gain and Noise Figure Contours (f = 900 MHz)
j1.0 j0.5 j2.0 OUT PUT
j0.2 NF Opt = 0.90 dB
INPUT
VCE = 2.0 V IC = 5.0 mA
---Potentially Unstable NF Opt (dB) 0.9
f (GHz)
1.0 dB 19 dB 18 17 1.5 dB 16 2.0 dB
O
0.22 84.5
Rn 6.5
K 0.90
1.9
- j0.2
3.0
- j0.5
4.0
- j2.0
- j1.0 0.2 0.5 1.0 2.0
Figure 24. Constant Gain and Noise Figure Contours (f = 1.9 GHz)
22
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j1.0 j0.5 j2.0
OUT PUT
j0.2
UT INP
VCE = 3.0 V IC = 3.0 mA NF Opt = 0.76 dB
---Potentially Unstable NF Opt (dB) 0.76
f (GHz) 0.9
21 dB 20 1.0 dB
O
0.37 26.3
Rn 11
K 0.36
- j0.2
19 18
1.5 2.0 3.0
Freescale Semiconductor, Inc...
- j0.5
4.0
- j2.0
- j1.0 0.2 0.5 1.0 2.0
Figure 25. Constant Gain and Noise Figure Contours (f = 900 MHz)
j1.0 j0.5 j2.0 OUT PUT
j0.2
UT INP
NF Opt = 0.91 dB
VCE = 3.0 V IC = 3.0 mA
---Potentially Unstable NF Opt (dB) 0.91
1.0 dB
f (GHz) 1.9
O
0.34 77.2
Rn 8.5
K 0.76
18 dB 17 1.5 16 15
- j0.2
2.0
3.0 4.0
- j0.5 - j1.0 0.2 0.5 1.0 2.0
- j2.0
Figure 26. Constant Gain and Noise Figure Contours (f = 1.9 GHz)
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Packaging
Freescale Semiconductor, Inc.
4 Packaging
2X
0.20 C
0.15 C
E E/2
D
B (B1)
PIN 1 IDENTIFIER IN THIS ZONE
A A2
e4
E1/2
4 1
A1 B
3
2 4X
A
e2
0.10 C 0.10
M
0.15 C
C A-B D
Freescale Semiconductor, Inc...
B B
VIEW C
4X
q1
DIM A A1 A2 b b1 B B1 c c1 D E E1 e1 e2 e3 e4 L L1 L2 q q1
SEATING PLANE
E1
2X
3X
b
NOTES: 1. DIMENSIONS ARE IN MILLIMETERS. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DIMENSION D DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.15mm PER END. DIMENSION E1 DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.15mm PER SIDE. 4. DIMENSIONS D AND E1 ARE DETERMINED AT THE OUTMOST EXTREMES OF THE PLASTIC BODY EXCLUSIVE OF MOLD FLASH, TIE BAR BURRS, GATE BURRS AND INTERLEAD FLASH, BUT INCLUDING ANY MISMATCH BETWEEN THE TOP AND BOTTOM OF PLASTIC BODY. 5. DATUMS A, B AND D TO BE DETERMINED 0.10mm FROM THE LEAD TIP. 6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 7. THESE DIMENSIONS APPLY TO THE FLAT SECTION OF THE LEAD BETWEEN 0.08mm AND 0.15mm FROM THE LEAD TIP. MILLIMETERS MIN MAX --1.10 0.00 0.10 0.80 1.00 0.25 0.40 0.25 0.35 0.55 0.70 0.55 0.65 0.10 0.25 0.08 0.20 2.00 BSC 2.10 BSC 1.25 BSC 1.30 BSC 0.65 BSC 1.15 BSC 0.50 BSC 0.26 0.46 0.425 REF 0.15 BSC 0 8 4 10
2X
e1
D
SECTION B-B
(SEE NOTE 7) GAUGE PLANE
b
c1
SEATING PLANE
c
e3
4X
q1
q L (L1) VIEW C
b1
BASE METAL WITH PLATING
C
L2
Figure 27. Outline Dimensions for SOT-343 (Case 318M-01, Issue 0)
24
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NOTES
Freescale Semiconductor, Inc...
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Freescale Semiconductor, Inc.
Freescale Semiconductor, Inc...
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MBC13900/D
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